Àá½Ã¸¸ ±â´Ù·Á ÁÖ¼¼¿ä. ·ÎµùÁßÀÔ´Ï´Ù.

ÀÓÇöõÆ® ÁÖÀ§¿° Ä¡·á¿ë diode laserÀÇ ÆÄÀå ¹× Á¶»ç½Ã°£¿¡ µû¸¥ ¿Âµµ º¯È­¿Í »ì±ÕÈ¿°ú ºÐ¼®

Analysis of temperature changes and sterilization effect of diode laser for the treatment of peri-implantitis by wavelength and irradiation time

±¸°­È¸º¹ÀÀ¿ë°úÇÐÁö 2017³â 33±Ç 3È£ p.178 ~ 188
¼³Á¤È¯, ÀÌÁØÀç, ±Ý±â¿¬, ÀÌÁ¾È£, ÀÓ¿µÁØ,
¼Ò¼Ó »ó¼¼Á¤º¸
¼³Á¤È¯ ( Seol Jeong-Hwan ) - ¼­¿ï´ëÇб³ Ä¡ÀÇÇдëÇпø Ä¡°úº¸Ã¶Çб³½Ç
ÀÌÁØÀç ( Lee Jun-Jae ) - ¼­¿ï´ëÇб³ Ä¡ÀÇÇдëÇпø Ä¡°úº¸Ã¶Çб³½Ç
±Ý±â¿¬ ( Kum Kee-Yeon ) - ¼­¿ï´ëÇб³ Ä¡°úº´¿ø Ä¡°úº¸Á¸Çб³½Ç
ÀÌÁ¾È£ ( Lee Jong-Ho ) - ¼­¿ï´ëÇб³ Ä¡°úº´¿ø ±¸°­¾Ç¾È¸é¿Ü°ú
ÀÓ¿µÁØ ( Lim Young-Jun ) - ¼­¿ï´ëÇб³ Ä¡ÀÇÇдëÇпø Ä¡°úº¸Ã¶Çб³½Ç

Abstract

¸ñÀû:º» ¿¬±¸¿¡¼­´Â »õ·Î °³¹ßµÈ ´ÙÀÌ¿Àµå ·¹ÀÌÀú Á¦Ç°À» ÀÌ¿ëÇÏ¿© ·¹ÀÌÀú ÆÄ¿ö¿¡ µû¸¥ ¿Âµµº¯È­¿Í ¹ÚÅ׸®¾Æ ¸ê±Õ ºñ±³½ÇÇèÀ» ÅëÇÏ¿© ±âÁ¸ Á¦Ç°°úÀÇ ÀÓÇöõÆ® ÁÖÀ§¿°Ä¡·á¿¡ ´ëÇÑ È¿°ú¸¦ ºñ±³ ½ÇÇèÇÏ¿´´Ù.

¿¬±¸ Àç·á ¹× ¹æ¹ý: 808 nm Diode laser¿Í 810 nm Diode laser¸¦ »ç¿ëÇÏ¿© µð½ºÅ©¿¡ ·¹ÀÌÀú¸¦ 60ÃÊ°£ Á¶»çÇÏ¿´À¸¸ç, Ãâ·ÂÀº 1 - 2.5 W·Î ¼³Á¤ÇÏ¿´´Ù. ¿ÂµµÃøÁ¤ ¸ðµâ°ú ¿ÂµµÃøÁ¤ ÇÁ·Î±×·¥À» ÀÌ¿ëÇÏ¿© disc Ç¥¸é¿Âµµº¯È­¸¦ ÃøÁ¤ÇÏ¿´´Ù. ¶ÇÇÑ, SLA, RBMÀÌ ÄÚÆÃµÈ disc¿¡ bacteria µµÆ÷ ÈÄ, 808 nm Diode laser¸¦ 30ÃÊ°£ Á¶»çÇÏ¿´À¸¸ç, Ãâ·ÂÀº 0.5 - 3 W·Î ¼³Á¤ÇÏ¿´´Ù.

°á°ú: 808 nm, 810 nm µÎ ÀåÄ¡ ¸ðµÎ Ãâ·ÂÀÌ Áõ°¡ÇÔ¿¡ µû¶ó ¿Âµµ »ó½ÂÆøÀº Áõ°¡ÇÏ¿´´Ù. ¸ðµç Á¶°Ç¿¡¼­ 810 nm laser¸¦ Á¶»çÇÏ¿´À» ¶§ Ãʱâ¿Âµµ»ó½Â¼Óµµ, ÇÏ°­¼Óµµ ¹× ÀüÈÄÀÇ ¿Âµµº¯È­·®Àº 808 nm laser º¸´Ù ³ô¾Ò´Ù. ·¹ÀÌÀú Á¶»ç ÈÄ Æ¼Å¸´½ µð½ºÅ© Ç¥¸éÀÇ º¯È­´Â µÎ ·¹ÀÌÀú ¸ðµÎ¿¡¼­ °üÂûµÇÁö ¾Ê¾Ò´Ù. Bacteria°¡ µµÆ÷µÈ µð½ºÅ©¿¡ 808 nm laser¸¦ Á¶»çÇÑ °á°ú, Ãâ·ÂÀÌ Áõ°¡ ÇÔ¿¡ µû¶ó »ì±ÕÈ¿°ú°¡ Áõ°¡ÇÏ´Â °ÍÀ» È®ÀÎÇÏ¿´´Ù.

°á·Ð: Diode laser¸¦ ÀÓ»ó¿¡ Àû¿ëÇÏ´Â °æ¿ì, µ¿ÀÏÇÑ Ãâ·Â¿¡¼­ ¿ÂµµÀÇ º¯µ¿ÆøÀÌ Àû°í ÃÖ´ë »ó½Â¿Âµµ°¡ ³·Àº 808 nm laser°¡ ȯÀÚ¿¡ ¾ÈÀüÇÒ °ÍÀ¸·Î »ç·áµÈ´Ù. ÇÏÁö¸¸ ½ÇÁ¦·Î ÀÓ»ó¿¡ Àû¿ëÇϱâ À§Çؼ­´Â º¸´Ù ´Ù¾çÇÑ ¾ÈÀü¼ºÆò°¡¸¦ ½Ç½ÃÇÏ¿© Àåºñ¿¡ ´ëÇÑ ½Å·Ú¼ºÀ» È®º¸ÇÏ¿©¾ß ÇÒ °ÍÀÌ´Ù.

Purpose: We compared the effects of newly developed diode laser (Bison 808 nm Diode laser) on the treatment of peri-implantitis with conventional products (Picasso 810 nm Diode laser) by comparing the surface temperature of titanium disc and bacterial sterilization according to laser power.

Materials and Methods: The titanium disc was irradiated for 60 seconds and 1 - 2.5 W using diode laser 808 nm and 810 nm. The surface temperature of the titanium disc was measured using a temperature measurement module and a temperature measurement program. In addition, in order to investigate the sterilizing effect according to the laser power, 808 nm laser was irradiated after application of bacteria to sandblasted large-grit acid-etched (SLA) and resorbable blast media (RBM) coated titanium discs. The irradiated disks were examined with scanning electron microscopy.

Results: Both 808 nm and 810 nm lasers increased disk surface temperature as the power increased. When the 810 nm was irradiated under all conditions, the initial temperature rise rate, the descending rate, and the temperature change before and after was higher than that of 808 nm. Disk surface changes were not observed on both lasers at all conditions. Bacteria were irradiated with 808 nm, and the bactericidal effect was increased as the power increased.

Conclusion: When applying these diode lasers to the treatment of peri-implantitis, 808 nm which have a bactericidal effect with less temperature fluctuation in the same power conditions would be considered safer. However, in order to apply a laser treatment in the dental clinical field, various safety and reliability should be secured.

Å°¿öµå

ÀÓÇöõÆ® ÁÖÀ§¿°; ´ÙÀÌ¿Àµå ·¹ÀÌÀú; ¹ÚÅ׸®¾Æ; ƼŸ´½; ¿Âµµº¯È­
peri-implantitis; diode laser; bacteria; titanium; temperature change

¿ø¹® ¹× ¸µÅ©¾Æ¿ô Á¤º¸

 

µîÀçÀú³Î Á¤º¸

KCI